60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn

Product Details
Customization: Available
Application: Solar Inverters
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
  • 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
  • 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
  • 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
  • 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
  • 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
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Basic Info.

Model NO.
DHC1M040120D
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dhc1m040120d
Package
to-3p
Type
N-Type Semiconductor
Voltage
1200V
Current
60A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
60A1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
Features
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitance
Easy to Parallel and Simple to Drive
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
     
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current ID TC=25ºC 60 A
TC=100ºC 40 A
Pulsed Drain Current ID(PULSE) 160 A
Power Dissipation Tj=150ºC Ptot 330 W
TC=25ºC Ptot W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.38 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHC1M040120D TO-3P DHC1M040120D Pb-free Tube 300/box
DHC1M040120B TO-247 DHC1M040120B Pb-free Tube 300/box
 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn

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