900A 750V Half Bridge Module Dgd900h75L2t
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Product Details
| Customization: | Available |
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| Application: | Welding, UPS, Three-Leve Inverter |
| Batch Number: | 2025 |
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Year of Establishment
2004-12-07
Number of Employees
234
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Basic Info.
- Model NO.
- DGD900H75L2T
- Certification
- RoHS
- Manufacturing Technology
- Discrete Device
- Material
- Metal-Oxide Semiconductor
- Model
- Dgd900h75L2t
- Package
- MD
- Type
- N-Type Semiconductor
- Brand
- Wxdh
- Transport Package
- Box
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 25.00cm * 30.00cm
- Package Gross Weight
- 20.000kg
Product Description
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 1.48V @ IC =900A and Tj = 25°C |
| Extremely enhanced avalanche capability |
| Applications |
| Welding |
| UPS |
| Three-leve Inverter |
| AC and DC servo drive amplifier |
| Type | VCE | IC | VCEsat,Tj=25ºC | Tjop | Package |
|
DGD900H75L2T
|
750V |
900A (Tj=100ºC)
|
1.48V (Typ)
|
175ºC
|
MD |
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Collector-to-Emitter Voltage | VCE | 750 | V | |||
| Gate-to-Emitter Voltage | VGE | ±25 | V | |||
| DC Collector current | Ic Tj=100ºC | 900 | A | |||
| Pulsed Collector Current #1 | ICM | 1800 | A | |||
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Peak Repetitive Reverse Voltage | VRRM | 750 | V | |||
| DC Blocking Voltage | VR | 750 | V | |||
| Average Rectified Forward Current | IF(AV) | 900 | A | |||
| Repetitive Peak Surge Current | IFRM | 1800 | A | |||
5.53IGBT Module
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Junction Temperature Range | Tjmax |
-55~175
|
ºC | |||
| Operating Junction Temperature | Tjop |
-55~175
|
ºC | |||
| Storage Temperature Range | Tstg |
-50~150
|
ºC | |||
| Isolation Voltage RMS,f=50Hz,t=1min | VISO | 3500 | A | |||
5.4Thermal Characteristics(IGBT Module)
| PARAMETER | SYMBOL | VALUE | UNIT | ||||||
| Thermal Resistance Junction to Case | IGBT RthJC | 0.05 | ºC/W | ||||||
| Diode RthJC | 0.069 | ºC/W | |||||||
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