300A 1200V Half Bridge Module Dgd300h120L2t

Product Details
Customization: Available
Application: Welding, UPS, Three-Leve Inverter
Batch Number: 2025
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Year of Establishment
2004-12-07
Number of Employees
234
  • 300A 1200V Half Bridge Module Dgd300h120L2t
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Basic Info.

Model NO.
DGD300H120L2T
Certification
RoHS
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
Dgd300h120L2t
Package
Econodual3
Type
N-Type Semiconductor
Brand
Wxdh
Transport Package
Box
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 25.00cm * 30.00cm
Package Gross Weight
20.000kg

Product Description

300A 1200V Half Bridge Module Dgd300h120L2t300A 1200V Half Bridge Module Dgd300h120L2t300A 1200V Half Bridge Module Dgd300h120L2t300A 1200V Half Bridge Module Dgd300h120L2t
 
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard
Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 1.95V
@ IC =300A and Tj = 25°C
Extremely enhanced avalanche capability
Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
 
Type VCE IC VCEsat,Tj=25ºC Tjop Package
DGD300H120L2T
1200V
300A (Tj=100ºC)
1.95V (Typ)
150ºC
MD
Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
     
Collector-to-Emitter Voltage VCE 1200 V
Gate-to-Emitter Voltage VGE ±20 V
DC Collector current Ic Tj=100ºC 300 A
Pulsed Collector Current #1 ICM 600 A
 

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
     
Peak Repetitive Reverse Voltage VRRM 1200 V
DC Blocking Voltage VR 1200 V
Average Rectified Forward Current IF(AV) 300 A
Repetitive Peak Surge Current IFRM 600 A

5.53IGBT Module
PARAMETER SYMBOL VALUE UNIT
     
Junction Temperature Range Tjmax
-40~175
ºC
Operating Junction Temperature Tjop
-40~150
ºC
Storage Temperature Range Tstg
-40~125
ºC
Isolation Voltage RMS,f=50Hz,t=1min VISO 2500 A

5.4Thermal Characteristics(IGBT Module)
PARAMETER SYMBOL VALUE UNIT
 
Thermal Resistance Junction to Case IGBT RthJC 0.11 ºC/W
Diode RthJC 0.155 ºC/W



 300A 1200V Half Bridge Module Dgd300h120L2t

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