400A 650V Half Bridge Module Dgd400h65m2t

• Customization: Available
• Application: Welding, UPS, Three-Leve Inverter
• Batch Number: 2025
• Model NO.: DGD400H65M2T
• Certification: RoHS
• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Model: Dgd400h65m2t
• Package: Econodual3
• Type: N-Type Semiconductor
• Brand: Wxdh
• Transport Package: Box
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 25.00cm * 30.00cm
• Package Gross Weight: 20.000kg

Product Description

 
1 Description

These Insulated Gate Bipolar Transistor used advanced trench and

Fieldstop technology design, provided excellent VCEsat and switching

speed ,low gate charge. Which accords with the RoHS standard

Features

FS Trench Technology, Positive temperature
coefficient

Low saturation voltage: VCE(sat), typ = 1.43V
@ IC =400A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

UPS

Three-leve Inverter

AC and DC servo drive amplifier

 

Type	VCE	IC	VCEsat,Tj=25ºC	Tjop	Package
DGD400H65M2T	650V	400A (Tj=100ºC)	1.43V (Typ)	175ºC	MD

Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Collector-to-Emitter Voltage			VCE	650		V
Gate-to-Emitter Voltage			VGE	±25		V
DC Collector current			Ic Tj=100ºC	400		A
Pulsed Collector Current #1			ICM	800		A

 

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Peak Repetitive Reverse Voltage			VRRM	650		V
DC Blocking Voltage			VR	650		V
Average Rectified Forward Current			IF(AV)	400		A
Repetitive Peak Surge Current			IFRM	800		A

5.53IGBT Module

PARAMETER			SYMBOL	VALUE		UNIT
Junction Temperature Range			Tjmax	-40~175		ºC
Operating Junction Temperature			Tjop	-40~150		ºC
Storage Temperature Range			Tstg	-40~120		ºC
Isolation Voltage RMS,f=50Hz,t=1min			VISO	4000		A

5.4Thermal Characteristics(IGBT Module)

PARAMETER						SYMBOL	VALUE		UNIT
Thermal Resistance Junction to Case						IGBT RthJC	0.115		ºC/W
						Diode RthJC	0.25		ºC/W