1200V 75A IGBT Module Dgc75c120m2t

Product Details
Customization: Available
Application: Welding, UPS, Three-Leve Inverter
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • 1200V 75A IGBT Module Dgc75c120m2t
  • 1200V 75A IGBT Module Dgc75c120m2t
  • 1200V 75A IGBT Module Dgc75c120m2t
  • 1200V 75A IGBT Module Dgc75c120m2t
  • 1200V 75A IGBT Module Dgc75c120m2t
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Basic Info.

Model NO.
DGC75C120M2T
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
Dgc75c120m2t
Package
Module
Type
N-Type Semiconductor
Brand
Wxdh
Transport Package
Econopack2
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
59.00cm * 29.00cm * 15.00cm
Package Gross Weight
20.000kg

Product Description

1200V 75A IGBT Module Dgc75c120m2t1200V 75A IGBT Module Dgc75c120m2t1200V 75A IGBT Module Dgc75c120m2t1200V 75A IGBT Module Dgc75c120m2t
 75A 1200V 6 in one-package
1200V 75A IGBT Module Dgc75c120m2t
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
 
Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 2.0V
@ IC =75A and Tj = 25°C
Extremely enhanced avalanche capability
Applications
Welding
UPS
Three-leve Inverter
AC to DC Converters
AC and DC servo drive amplifier
 
Type VCE IC VCEsat,Tj=25ºC Tjop Package
DGC75C120M2T 1200V 75A (Tj=100ºC) 2.0V (Typ) 175ºC Econopack2


Electrical Characteristics
5.1 Absolute Maximum Ratings (IGBT-inverter/IGBT-brake) (Tc=25ºC,unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
     
Collector-to-Emitter Voltage VCE 1200 V
Gate-to-Emitter Voltage VGE ±30 V
DC Collector current Ic Tj=25ºC 150 A
Tj=100ºC 75 A
Pulsed Collector Current #1 ICM 300 A
 
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
     
Peak Repetitive Reverse Voltage VRRM 1200 V
DC Blocking Voltage VR 1200 V
Average Rectified Forward Current IF(AV) 75 A
Repetitive Peak Surge Current IFRM 150 A
Nonrepetitive Peak Surge Current(single) /tp=1.0ms IFSM 600 A


5.3 IGBT Module
PARAMETER SYMBOL VALUE UNIT
     
Junction Temperature Range Tjmax -45~175 ºC
Operating Junction Temperature Tjop -45~150 ºC
Storage Temperature Range Tstg -45~150 ºC
Isolation Voltage RMS,f=50Hz,t=1min VISO 4000 A




 1200V 75A IGBT Module Dgc75c120m2t

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