60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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Product Details
| Customization: | Available |
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| Application: | Welding, UPS |
| Batch Number: | 2023 |
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Year of Establishment
2004-12-07
Number of Employees
234
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Basic Info.
- Model NO.
- DHG60N65D
- Manufacturing Technology
- Discrete Device
- Material
- Silicon
- Model
- Dhg60n65D
- Package
- to-247
- Type
- N-Type Semiconductor
- Voltage
- 650V
- Current
- 60A
- Brand
- Wxdh
- Transport Package
- Tube
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 120 | A | ||
| Collector Current | (Tc=100ºC) | 60 | A | ||
| Pulsed Collector Current | ICM | 180 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 30 | A | ||
| Diode Pulsed Current |
IFM
|
90 | A | ||
| Total Dissipation | TC=25ºC |
Ptot
|
406 | W | |
| TC=100ºC |
Ptot
|
163 | W | ||
| Junction Temperature | Tj | -45~175 | ºC | ||
| storage Temperature | Tstg | -45~150 | ºC | ||
| Features |
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FS Trench Technology, Positive temperature
coefficient
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Low saturation voltage: VCE(sat), typ = 1.85V
@ IC =60A and Tj = 25°C
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Extremely enhanced avalanche capability
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| Applications |
| Welding |
| Three-level inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
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DGC60N60D
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TO-247 | DGC60N60D | Pb-free | Tube | 1000/box |
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