| Customization: | Available |
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| Manufacturing Technology: | Discrete Device |
| Type: | N-type Semiconductor |
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| PARAMETER | SYMBOL | RATING | UNIT | ||
| DC Intput Voltage | VI | 35 | V | ||
| Output Current | IO | 1.0 | V | ||
| Thermal resistance junction-air | RθJA | 87 | ºC/W | ||
| Thermal resistance junction-cases | RθJC | 6.67 | ºC/W | ||
| Operating Junction Temperature Range | Topr | 0~125 | ºC | ||
| storage Temperature | Tstg | -65~175 | ºC | ||
| Parameter | Symbol | Testing Conditions | Min | Typ | Max | Units |
| Output Voltage | VO* | Tj=25ºC,VI=19V,IO=500mA | 11.76 | 12.0 | 12.24 | V |
| Output Voltage | VO | 5.0mA<IO<1.0A,PO<15W VI=15.5V~27V | 11.76 | 12.0 | 12.24 | V |
| Features |
| Output Current TO 1.0A |
| Output Voltage of 5V, 6V, 8V, 9V, 10V, 12V, 15V |
| Thermal Overload Protection |
| Short Current Protection |
| Output Transistor Safe Protection |
| Compliant with the RoHS standard |
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