10A 150V Schottky Barrier Diode Mbr10150CT to-252b

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: MBR10150CT
• Package: to-252b
• Application: Switching Power Supply
• Model: Mbr10150CT
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 150V
• Current: 10A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

Features

High junction temperature capabiliy

Low leakage current

Low thermal resistance

High frequency operation

Avalanche specification

Applications

Switching Power Supply

Power Switching Circuits

General Purpose

 

PARAMETER			SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage			VRRM	150	V
RMS Reverse Voltage			VR(RMS)	120	V
DC Blocking Voltage			VR	150	V
Average Rectified Forward Current(single)		TC=120ºC	IF(AV)	5	A
Average Rectified Forward Current(double)				10	A
Repetitive Peak Surge Current(single)			IFRM	10	A
Nonrepetitive Peak Surge Current(single)		t=8.3ms	IFSM	120	A
Avalanche Energy(single)		L=1mH	EAS	15	mJ
Junction Temperature			Tj	-55~150	ºC
storage Temperature			Tstg	-55~150	ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
MBR10150CT	TO-252	MBR10150CT	Pb-free	Braid	3000/box
MBR10150CT	TO-220	MBR10150CT	Pb-free	Tube	1000/box
MBRF10150CT	TO-220F	MBR10150CT	Pb-free	Tube	1000/box