7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p

Product Details
Customization: Available
Application: Solar Inverters
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
  • 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
  • 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
  • 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
  • 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
  • 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
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Basic Info.

Model NO.
DHC1M650170D
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dhc1m650170d
Package
to-3p
Type
N-Type Semiconductor
Voltage
1700V
Current
7A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
7.0A 1700V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
Features
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitance
Easy to Parallel and Simple to Drive
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
     
Drian-to-Source Voltage VDSS 1700 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current ID TC=25ºC 7.0 A
TC=100ºC 4.5 A
Pulsed Drain Current IDM 9.0 A
Power Dissipation Tj=150ºC Ptot 62 W
TC=25ºC Ptot W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 1.8 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHC1M650170D TO-3P DHC1M650170D Pb-free Tube 300/box
DHC1M650170B TO-247 DHC1M650170B Pb-free Tube 300/box
 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p

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