NPN Epitaxial Silicon Transistor Bu406 to-220c

Product Details
Customization: Available
Application: Power Charger
Batch Number: 2022
Still deciding? Get samples of $ !
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • NPN Epitaxial Silicon Transistor Bu406 to-220c
  • NPN Epitaxial Silicon Transistor Bu406 to-220c
  • NPN Epitaxial Silicon Transistor Bu406 to-220c
  • NPN Epitaxial Silicon Transistor Bu406 to-220c
  • NPN Epitaxial Silicon Transistor Bu406 to-220c
  • NPN Epitaxial Silicon Transistor Bu406 to-220c
Find Similar Products

Basic Info.

Model NO.
BU406
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Bu406
Package
to-220c
Type
N-Type Semiconductor
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

 NPN Epitaxial Silicon Transistor Bu406 to-220cNPN Epitaxial Silicon Transistor Bu406 to-220cNPN Epitaxial Silicon Transistor Bu406 to-220cNPN Epitaxial Silicon Transistor Bu406 to-220c
 
Description
BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference.
 
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 7 A
*Collector Current (Pulse) ICP 10 A
Base Current (DC) IB 4 A
Collector Dissipation (TC=25ºC) PC 60 W
Collector Dissipation (Ta=25ºC) PC 2 W
Junction Temperature TJ 150 ºC
Storage Temperature TSTG - 55 ~ 150 ºC
 
Features
High current output up to 7A
Low saturation voltage
 
Applications
voltage regulator
medium power linear
switching
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
BU406 TO-220C BU406 Pb-free Tube 1000/box
 NPN Epitaxial Silicon Transistor Bu406 to-220c

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier