Customization: | Available |
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Application: | Power Switching Circuit |
Batch Number: | 2022 |
Shipping Cost: | Contact the supplier about freight and estimated delivery time. |
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PARAMETER | SYMBOL | VALUE | UNIT | |
Maximum Drian-Source DC Voltage | VDS | 800 | V | |
Maximum Gate-Drain Voltage | VGS | ±20 | V | |
Drain Current(continuous) | ID(T=25ºC) | 8 | A | |
(T=100ºC) | 5.1 | A | ||
Drain Current(Pulsed) | IDM | 24 | A | |
Single Pulse Avalanche Energy | EAS | 90 | mJ | |
Total Dissipation | Ta=25ºC | Ptot | 2 | W |
TC=25ºC | Ptot | 78 | W | |
Junction Temperature | Tj |
-55~150
|
ºC | |
storage Temperature | Tstg | -55~150 | ºC |
Features |
Very Low FOM (RDS(on) X Qg )
|
Built-in ESD Diode
|
Low on resistance(Rdson≤2.3Ω)
|
Low gate charge(Typ: 24nC)
|
Low reverse transfer capacitances(Typ: 5.5pF)
|
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power factor correction(PFC).
|
Switched mode power supplies(SMPS).
|
Uninterruptible power supply(UPS).
|
AC to DC Converters
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Telecom
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Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DJG660N80E
|
TO-220C |
DJG660N80E
|
Pb-free | PIPE | 1000/box |