9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247

Product Details
Customization: Available
Application: Power Switching Applications
Batch Number: 2021
Still deciding? Get samples of US$ 0.15/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
  • 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
  • 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
  • 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
  • 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
  • 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
Find Similar Products

Basic Info.

Model NO.
9N90B
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
9n90b
Package
to-247
Type
N-Type Semiconductor
Voltage
900V
Current
9A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-2479A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-2479A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-2479A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
PARAMETER SYMBOL VALUE UNIT
9N90B
Drian-to-Source Voltage VDSS 900 V
Gate-to-Drian Voltage VGSS ±30 V
Drain Current(continuous) ID(T=25ºC) 9 0A
(T=100ºC) 5.7 A
Drain Current(Pulsed) IDM 36 A
Single Pulse Avalanche Energy EAS 980 mJ
Total Dissipation Ta=25ºC Ptot 0.54 W
TC=25ºC Ptot 70 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Fast Switching
ESD improved capability
Low on resistance(Rdson≤1.3Ω)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
used in various power switching circuit for system
miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
9N90B
TO-247
9N90B
Pb-free Tube 1000/box
 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier