9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247

• Application: Power Switching Applications
• Batch Number: 2021
• Manufacturing Technology: Discrete Device
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 9N90B
• Material: Metal-Oxide Semiconductor
• Model: 9n90b
• Package: to-247
• Type: N-Type Semiconductor
• Voltage: 900V
• Current: 9A
• Brand: Wxdh
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			9N90B
Drian-to-Source Voltage		VDSS	900		V
Gate-to-Drian Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	9		0A
		(T=100ºC)	5.7		A
Drain Current(Pulsed)		IDM	36		A
Single Pulse Avalanche Energy		EAS	980		mJ
Total Dissipation	Ta=25ºC	Ptot	0.54		W
	TC=25ºC	Ptot	70		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low on resistance(Rdson≤1.3Ω)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

used in various power switching circuit for system
miniaturization and higher efficiency.

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
9N90B	TO-247	9N90B	Pb-free	Tube	1000/box