7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247

Product Details
Customization: Available
Application: Solar Inverters
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
  • 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
  • 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
  • 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
  • 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
  • 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
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Basic Info.

Model NO.
DCC650M170G1
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dcc650m170g1
Package
to-247-3L
Type
N-Type Semiconductor
Voltage
1700V
Cirrent
7A
Brand
Wxdh
Transport Package
Tube
Specification
Sic
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-2477.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-2477.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-2477.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
5A 1700V N-channel SIC Power MOSFET
 
Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required.
7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-2477.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
 
Drian-to-Source Voltage VDSS 1700 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current
VGS=20V,TC=25ºC
7 A
VGS=20V,TC=100ºC
4.5 A
Pulsed Drain Current ID(PULSE) 9 A
Power Dissipation Tj=150ºC PD 62 W
TC=25ºC PD W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 1.8 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCC650M170G1
TO-247-3L
DCC650M170G1
Pb-free Tube 1800/box
 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247

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