30A 200V Schottky Barrier Diode Mbr30100CT to-220 & Mbr30100nct to-3pn

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Package: to-220/3pn
• Application: Switching Power Supply
• Model: Mbr30100CT/Mbr30100nct
• Model NO.: MBR30100CT/MBR30100NCT
• Batch Number: 2023
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000

Product Description

 

Features

High junction temperature capabiliy

Low leakage current

Low thermal resistance

High frequency operation

Avalanche specification

Applications

Switching Power Supply

Power Switching Circuits

General Purpose

 

PARAMETER			SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage			VRRM	100	V
RMS Reverse Voltage			VR(RMS)	80	V
DC Blocking Voltage			VR	100	V
Average Rectified Forward Current(single)		TC=120ºC	IF(AV)	15	A
Average Rectified Forward Current(double)				30	A
Repetitive Peak Surge Current(single)			IFRM	20	A
Nonrepetitive Peak Surge Current(single)		t=8.3ms	IFSM	200	A
Avalanche Energy(single)		L=1mH	EAS	32	mJ
Junction Temperature			Tj	-55~150	ºC
storage Temperature			Tstg	-55~150	ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
MBR30100NCT	TO-3PN	MBR30100NCT	Pb-free	Tube	300/box
MBR30100BCT	TO-247	MBR30100BCT	Pb-free	Tube	300/box
MBR30100CT	TO-220	MBR30100CT	Pb-free	Tube	1000/box