40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: G40N120D
• Package: to-247
• Application: Welding, UPS
• Model: G40n120d
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 1200V
• Current: 40A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	1200		V
Gate- Emitter Voltage		VGES	±30		V
Collector Current		IC(TJ=25ºC)	80		A
Collector Current		(TJ=100ºC)	40		A
Pulsed Collector Current		ICM	160		A
Diode Continuous Forward Current		IF @TJ = 100 °C	40		A
Diode Pulsed Current		IFM	160		A
Total Dissipation	TC=25ºC	Ptot	388		W
	TC=100ºC	Ptot	155		W
Junction Temperature		Tj	-45~175		ºC
storage Temperature		Tstg	-45~175		ºC

 

Features

Low VCEsat

Low gate charge

Excellent switching speed

Easy paralleling capability due to positive

temperature Coefficient in VCEsat

Tsc≥10µs

Fast recovery full current anti-parallel diode

Applications

Welding

Three-level inverter

UPS

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G40N120D	TO-247	G40N120D	Pb-free	Tube	1000/box