21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Package: to-220f
• Application: Power Supply
• Model: Dhfsj21n65
• Model NO.: DHFSJ21N65
• Batch Number: 2021
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			DHFSJ21N65
Drian-to-Source Voltage		VDSS	650		V
Gate-to-Source Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	21		A
Single Pulse Avalanche Energy		EAS	484		mJ
Total Dissipation	Ta=25ºC	Ptot	2		W
	TC=25ºC	Ptot	34		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Low switching loss

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Power factor correction(PFC).

Switched mode power supplies(SMPS).

Uninterruptible power supply(UPS).

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHFSJ21N65	TO-220F	DHFSJ21N65	Pb-free	Tube	1000/box