20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
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Product Details
| Customization: | Available |
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| Voltage: | 900V |
| Current: | 20A |
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Year of Establishment
2004-12-07
Number of Employees
234
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Basic Info.
- Model NO.
- 20N90D
- Manufacturing Technology
- Discrete Device
- Type
- N-type Semiconductor
- Material
- Metal-Oxide Semiconductor
- Package
- to-3pn
- Application
- Power Switching Circuit
- Model
- 20n90d
- Batch Number
- 2021
- Brand
- Wxdh
- Transport Package
- Tube
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Drian-to-Source Voltage | VDSS | 900 | V | ||
| Gate-to-Source Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 20 | A | ||
| (T=100ºC) | 13.2 | A | |||
| Drain Current(Pulsed) | IDM | 80 | A | ||
| Single Pulse Avalanche Energy | EAS | 1000 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 3 | W | |
| TC=25ºC | Ptot | 250 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| ESD improved capability |
| Low ON Resistance(Rdson≤0.4Ω) |
| Low Gate Charge(Typ: 162nC) |
| Low Reverse Transfer Capacitances(Typ: 63.5pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 20N90D | TO-3PN | 20N90D | Pb-free | Tube | 300/box |
| 20N90B | TO-247 | 20N90B | Pb-free | Tube | 300/box |
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