20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 20N90D
• Package: to-3pn
• Application: Power Switching Circuit
• Model: 20n90d
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 900V
• Current: 20A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
Drian-to-Source Voltage		VDSS	900		V
Gate-to-Source Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	20		A
		(T=100ºC)	13.2		A
Drain Current(Pulsed)		IDM	80		A
Single Pulse Avalanche Energy		EAS	1000		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	3		W
	TC=25ºC	Ptot	250		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low ON Resistance(Rdson≤0.4Ω)

Low Gate Charge(Typ: 162nC)

Low Reverse Transfer Capacitances(Typ: 63.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
20N90D	TO-3PN	20N90D	Pb-free	Tube	300/box
20N90B	TO-247	20N90B	Pb-free	Tube	300/box