23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn

• Application: Power Switching Circuit
• Batch Number: 2022
• Manufacturing Technology: Discrete Device
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 23N50D
• Material: Metal-Oxide Semiconductor
• Model: 23n50d
• Package: to-3pn
• Type: N-Type Semiconductor
• Voltage: 500V
• Current: 23A
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			23N50D
Maximum Drian-Source DC Voltage		VDS	500		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	23		A
		(T=100ºC)	14.5		A
Drain Current(Pulsed)		IDM	90		A
Single Pulse Avalanche Energy		EAS	1400		mJ
Total Dissipation	Ta=25ºC	Ptot	2.4		W
	TC=25ºC	Ptot	260		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low on resistance(Rdson≤0.28Ω)

Low gate charge(Typ: 52nC)

Low reverse transfer capacitances(Typ: 16pF)

100% single pulse avalanche energy test

100% ΔV_DS Test

Applications

Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
23N50D	TO-3P	23N50D	Pb-free	Tube	300/box
23N50D	TO-3PN	23N50D	Pb-free	Tube	300/box