| Customization: | Available |
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| Application: | Power Switching Circuit |
| Batch Number: | 2022 |
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| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 23N50D | |||||
| Maximum Drian-Source DC Voltage | VDS | 500 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 23 | A | ||
| (T=100ºC) | 14.5 | A | |||
| Drain Current(Pulsed) | IDM | 90 | A | ||
| Single Pulse Avalanche Energy | EAS | 1400 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2.4 | W | |
| TC=25ºC | Ptot | 260 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| ESD improved capability |
| Low on resistance(Rdson≤0.28Ω) |
| Low gate charge(Typ: 52nC) |
| Low reverse transfer capacitances(Typ: 16pF) |
| 100% single pulse avalanche energy test |
| 100% ΔVDS Test |
| Applications |
| Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 23N50D | TO-3P | 23N50D | Pb-free | Tube | 300/box |
| 23N50D | TO-3PN | 23N50D | Pb-free | Tube | 300/box |
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