20A 100V Low Vf Schottky Barrier Diode Mbr20100CT to-220

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: P-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: MBR20100CT
• Package: to-220
• Application: Switching Power Supply
• Model: Mbr20100CT
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 100V
• Current: 20A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

Features

High junction temperature capabiliy

Low leakage current

Low thermal resistance

High frequency operation

Avalanche specification

Applications

Switching Power Supply

Power Switching Circuits

General Purpose

 

PARAMETER			SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage			VRRM	100	V
RMS Reverse Voltage			VR(RMS)	80	V
DC Blocking Voltage			VR	100	V
Average Rectified Forward Current(single)		TO-220,TC=120ºC TO-220F,TC=90ºC	IF(AV)	10	A
Average Rectified Forward Current(double)				20	A
Repetitive Peak Surge Current(single)			IFRM	15	A
Nonrepetitive Peak Surge Current(single)		t=8.3ms	IFSM	180	A
Avalanche Energy(single)		L=1mH	EAS	25	mJ
Junction Temperature			Tj	-55~175	ºC
storage Temperature			Tstg	-55~175	ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
MBR20R100CT	TO-220	MBR20R100CT	Pb-free	Tube	1000/box
MBRF20R100CT	TO-220F	MBRF20R100CT	Pb-free	Tube	1000/box