9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 9N90
• Package: to-3pn
• Application: Power Switching Circuit
• Model: 9n90
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 900V
• Current: 9A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			9N90	9N90
Maximum Drian-Source DC Voltage		VDS	900		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	9		A
		(T=100ºC)	5.7		A
Drain Current(Pulsed)		IDM	36		A
Single Pulse Avalanche Energy		EAS	980		mJ
Total Dissipation	Ta=25ºC	Ptot	0.54	0.54	W
	TC=25ºC	Ptot	70	70	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low on resistance(Rdson≤1.3Ω)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.

Power Switch Circuit of Adaptor and Charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
9N90	TO-3PN	9N90	Pb-free	Tube	300/box