18A 1200V N-Channel Sic Power Mosfet S18n120d

Product Details
Customization: Available
Application: Power Supplies
Batch Number: 2021
Still deciding? Get samples of US$ 0.15/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • 18A 1200V N-Channel Sic Power Mosfet S18n120d
  • 18A 1200V N-Channel Sic Power Mosfet S18n120d
  • 18A 1200V N-Channel Sic Power Mosfet S18n120d
  • 18A 1200V N-Channel Sic Power Mosfet S18n120d
  • 18A 1200V N-Channel Sic Power Mosfet S18n120d
  • 18A 1200V N-Channel Sic Power Mosfet S18n120d
Find Similar Products

Basic Info.

Model NO.
S18N120D
Manufacturing Technology
Discrete Device
Material
Sic
Model
S18n120d
Package
to-247
Type
N-Type Semiconductor
Voltage
1200V
Current
18A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

18A 1200V N-Channel Sic Power Mosfet S18n120d18A 1200V N-Channel Sic Power Mosfet S18n120d18A 1200V N-Channel Sic Power Mosfet S18n120d18A 1200V N-Channel Sic Power Mosfet S18n120d
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
     
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current ID TC=25ºC 18 A
TC=100ºC 12 A
Pulsed Drain Current IDM 40 A
Power Dissipation Tj=150ºC Ptot 125 W
TC=25ºC Ptot W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
S18N120D TO-247 S18N120D Pb-free Tube 300/box
 18A 1200V N-Channel Sic Power Mosfet S18n120d

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier