35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6

Product Details
Customization: Available
Application: Power Switching Applications
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
  • 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
  • 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
  • 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
  • 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
  • 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
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Basic Info.

Model NO.
DSP007N03LA
Material
Metal-Oxide Semiconductor
Model
DSP007n03la
Package
Dfn5X6
Type
P-Type Semiconductor
Voltage
35V
Current
355A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X635V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X635V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X635V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
PARAMETER SYMBOL VALUE UNIT
Drian-to-Source Voltage VDSS 35 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) ID(T=25ºC) 355 A
(T=100ºC) 251 A
Drain Current(Pulsed) IDM 1050 A
Single Pulse Avalanche Energy EAS 1122 mJ
Total Dissipation Ta=25ºC Ptot 2 W
TC=25ºC Ptot 150 W
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Features
AEC-Q101 qualified
Low ON Resistance
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Pb-Free plating / Halogen-Free / RoHS compliant
Applications
Power switching applications
DC-DC converters
Full bridge control
Automotive electronics
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DSP007N03LA
DFN5X6
DSP007N03LA
Pb-fee REEL 6000/box
 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6

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