Customization: | Available |
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Application: | Power Supply |
Batch Number: | 2021 |
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PARAMETER | SYMBOL | VALUE | UNIT | ||
8N65
|
|||||
Drian-to-Source Voltage | VDSS | 650 | V | ||
Gate-to-Source Voltage | VGSS | ±30 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 7.5 | A | ||
(T=100ºC) | 4.8 | A | |||
Drain Current(Pulsed) | IDM | 30 | A | ||
Single Pulse Avalanche Energy | EAS | 350 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 2 | W | |
TC=25ºC | Ptot | 100 | W | ||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast switching
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ESD improved capability
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Low on resistance
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Low gate charge
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Low reverse transfer capacitances
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100% single pulse avalanche energy test
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100% ΔVDS test
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Applications |
Used in various power switching circuit for system
miniaturization and higher efficiency.
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Power switch circuit of electron ballast and adaptor.
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Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
8N65
|
TO-220C |
8N65
|
Pb-free | PIPE | 1000/box |