7.5A 650V N-Channel Enhancement Mode Power Mosfet 8n65 to-220c
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Product Details
| Customization: | Available |
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| Application: | Power Supply |
| Batch Number: | 2021 |
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Year of Establishment
2004-12-07
Number of Employees
234
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Basic Info.
- Model NO.
- 8N65
- Manufacturing Technology
- Discrete Device
- Material
- Metal-Oxide Semiconductor
- Model
- 8n65
- Package
- to-220c
- Type
- N-Type Semiconductor
- Voltage
- 650V
- Current
- 7.5A
- Brand
- Wxdh
- Transport Package
- Tube
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
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8N65
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| Drian-to-Source Voltage | VDSS | 650 | V | ||
| Gate-to-Source Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 7.5 | A | ||
| (T=100ºC) | 4.8 | A | |||
| Drain Current(Pulsed) | IDM | 30 | A | ||
| Single Pulse Avalanche Energy | EAS | 350 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | W | |
| TC=25ºC | Ptot | 100 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
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Fast switching
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ESD improved capability
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Low on resistance
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Low gate charge
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Low reverse transfer capacitances
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100% single pulse avalanche energy test
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100% ΔVDS test
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| Applications |
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Used in various power switching circuit for system
miniaturization and higher efficiency.
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Power switch circuit of electron ballast and adaptor.
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| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
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8N65
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TO-220C |
8N65
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Pb-free | PIPE | 1000/box |
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