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Insulated Gate Bipolar Transistor IGBT G25t120d to-247

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  • 6 yrs

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Product Highlights

  • Trench Technology: Features FS Trench Technology for enhanced performance.
  • High Avalanche Capability: Extremely enhanced avalanche capability for reliability.
  • Positive Temperature Coefficient: Ensures safe parallel operation with positive temperature coefficient.
  • OEM and ODM Services: Customization services available for OEM and ODM requirements.
  • RoHS Compliant: Product is Pb-free and meets RoHS standards.
  • IATF16949 Certified: Manufacturer holds IATF16949 management system certification.

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Clearer shipment tracking with platform-supported logistics.
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Optional pre-shipment inspection for quality and quantity checks.
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Platform-assisted dispute resolution, including refunds or returns when applicable.

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Product Images of Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247
Insulated Gate Bipolar Transistor IGBT G25t120d to-247 pictures & photos
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
Insulated Gate Bipolar Transistor IGBT G25t120d to-247 pictures & photos
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
Insulated Gate Bipolar Transistor IGBT G25t120d to-247 pictures & photos
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
Insulated Gate Bipolar Transistor IGBT G25t120d to-247 pictures & photos
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
Insulated Gate Bipolar Transistor IGBT G25t120d to-247 pictures & photos
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
Insulated Gate Bipolar Transistor IGBT G25t120d to-247 pictures & photos
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
    Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
    Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
    Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
    Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
    Insulated Gate Bipolar Transistor IGBT G25t120d to-247
  • Insulated Gate Bipolar Transistor IGBT G25t120d to-247
    Insulated Gate Bipolar Transistor IGBT G25t120d to-247

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Product Description

Insulated Gate Bipolar Transistor IGBT G25t120d to-247Insulated Gate Bipolar Transistor IGBT G25t120d to-247Insulated Gate Bipolar Transistor IGBT G25t120d to-247Insulated Gate Bipolar Transistor IGBT G25t120d to-247
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 1200 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 50 A
Collector Current  (Tc=100ºC) 25 A
Pulsed Collector Current ICM 75 A
Diode Continuous Forward Current I@TC = 100 °C 25 A
Diode Maximum Forward Current IFM 75 A
Total Dissipation TC=25ºC PD 278 W
TC=100ºC PD 111 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V
@ IC =25A and TC = 100°C
Extremely enhanced avalanche capability
Applications
Aircondition
Welding
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G25T120D TO-247 G25T120D Pb-free Tube 300/box
 Insulated Gate Bipolar Transistor IGBT G25t120d to-247

About the Supplier

This supplier has been audited by SGS. Verify the report on the official SGS website with ID "QIP-ASR2441356". Items marked "verified" are certified.

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Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd

About Our Factory & Business Background

verified Business Type
Manufacturer/Factory & Trading Company
Address
No. 88 Zhongtong Road, Shuofang Industry Park, New District, Wuxi, Jiangsu, China
verified Plant Area
18862 square meters
verified Number of Employees
234
verified Registered Capital
81,500,000 RMB
verified Terms of Payment
LC, T/T, D/P, PayPal, Western Union, Small-amount payment
verified International Commercial Terms(Incoterms)
FOB, CIF, CFR
verified Average Lead Time
Peak Season Lead Time: one month
Off Season Lead Time: one month
verified Nearest Port
Shanghai Port

Our Production Capability & Technical Expertise

verified Main Products
Mosfets, Diodes, IGBT, Transistor, Thyristor, IC, SIC Mosfet, SIC Diode
verified Production Machines
Cutting Machine, Testing and Sorting Machine, Wire Banding Machine, Die Attach Machine, Molding Plastic Machine, Oven
verified ODM Service Available
Yes
verified OEM Service Available
Yes
verified R&D Engineers
35 people
verified Test Reports for Raw Materials
RoHS, Reach
verified Own Brand
Yes

Our Industry Experience & Global Business Record

verified Year of Establishment
2004-12-07
Export Year
2010-03-11
verified Main Markets
South Asia
verified Number of Foreign Trading Staff
2

Our Certifications, Standards & Industry Recognition

verified Management System Certification
IATF16949

FAQ

What is the maximum collector-emitter voltage?
The Collector-Emitter Voltage (VCES) rating is 1200V.
What are the typical applications for this IGBT?
It is designed for applications including air conditioning, welding, and UPS systems.
Is OEM or ODM service available?
Yes, both OEM and ODM services are available for this product.
What is the package type and quantity per box?
The package is TO-247, with 300 units per tube box.
What is the lead time for orders?
The average lead time is one month for both peak and off-peak seasons.
What payment terms are accepted?
Accepted payment terms include LC, T/T, D/P, PayPal, Western Union, and small-amount payments.

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