| Customization: | Available |
|---|---|
| Manufacturing Technology: | Discrete Device |
| Type: | N-type Semiconductor |
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| Description |
| These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. |
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
| DC-DC converters |
| Full bridge control |
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Drian-to-Source Voltage | VDSS | 68 | V | ||
| Gate-to-Source Voltage | VGSS | ±20 | V | ||
| Continuous Drain Current | ID TC=25ºC | 100 | A | ||
| TC=100ºC | 70 | A | |||
| Pulsed Drain Current | IDM | 400 | A | ||
| Single Pulse Avalanche Energy | EAS | 600 | V | ||
| Power Dissipation | Ta=25ºC | Ptot | 2 | W | |
| TC=25ºC | Ptot | 145 | W | ||
| Junction Temperature Range | Tj | -55~175 | ºC | ||
| Storage Temperature Range | Tstg | -55~175 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DH060N07B | TO-251 | DH060N07B | Pb-free | Tube | 3000/box |
| DH060N07D | TO-252 | DH060N07D | Pb-free | Tape & Reel | 2500/box |
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