100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Package: to-252b
• Application: Power Switching,Converters, Full Bridge Control
• Model: Dh060n07D
• Model NO.: DH060N07D
• Batch Number: 2021
• Brand: Wxdh
• Transport Package: by Sea, Packing
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000

Product Description

 

Description

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.

 

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

 

Applications

Power switching applications

DC-DC converters

Full bridge control

 

PARAMETER		SYMBOL	RATING		UNIT
Drian-to-Source Voltage		VDSS	68		V
Gate-to-Source Voltage		VGSS	±20		V
Continuous Drain Current		ID TC=25ºC	100		A
		TC=100ºC	70		A
Pulsed Drain Current		IDM	400		A
Single Pulse Avalanche Energy		EAS	600		V
Power Dissipation	Ta=25ºC	Ptot	2		W
	TC=25ºC	Ptot	145		W
Junction Temperature Range		Tj	-55~175		ºC
Storage Temperature Range		Tstg	-55~175		ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DH060N07B	TO-251	DH060N07B	Pb-free	Tube	3000/box
DH060N07D	TO-252	DH060N07D	Pb-free	Tape & Reel	2500/box