30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c

Product Details
Customization: Available
Application: Power Switching
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
  • 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
  • 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
  • 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
  • 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
  • 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
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Basic Info.

Model NO.
DTG023N03L
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
DTG023n03L
Package
to-220c
Type
N-Type Semiconductor
Voltage
30V
Current
150A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
PARAMETER SYMBOL VALUE UNIT
Maximum Drian-Source DC Voltage VDS 60 V
Maximum Gate-Drain Voltage VGS ±20 V
Drain Current(continuous) ID(T=25ºC) 150 A
(T=100ºC) 95 A
Drain Current(Pulsed) IDM 600 A
Single Pulse Avalanche Energy EAS 462 mJ
Total Dissipation Ta=25ºC Ptot 1.7 W
TC=25ºC Ptot 96 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Low ON Resistance
Low Gate Charge
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Pb-Free plating / Halogen-Free / RoHS compliant
Applications
Motor Control and Drive
Charge/Discharge for Battery Management System
Synchronous Rectifier for SMPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DTG023N03L
TO-220C
DTG023N03L
Pb-free Tube 1000/box
 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c

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