2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252

Product Details
Customization: Available
Application: Power Switching Circuit
Batch Number: 2021
Still deciding? Get samples of US$ 0.15/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
  • 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
  • 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
  • 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
  • 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
  • 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
Find Similar Products

Basic Info.

Model NO.
D2N65
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
D2n65
Package
to-252b
Type
N-Type Semiconductor
Voltage
650V
Current
2A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-2522A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-2522A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-2522A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
 
PARAMETER SYMBOL VALUE UNIT
2N65/I2N65/E2N65/B2N65/D2N65 F2N65  
Drian-Source Voltage VDS 650 V
Gate-Drain Voltage VGS ±30 V
Drain Current(continuous) ID(T=25ºC) 2 A
(T=100ºC) 1.26 A
Drain Current(Pulsed) IDM 8 A
Single Pulse Avalanche Energy EAS 64 mJ
Peak Diode Recovery dv/dt dv/dt 5 V/ns
Total Dissipation Ta=25ºC Ptot 2 2 W
TC=25ºC Ptot 35 20 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Fast Switching
Low ON Resistance(Rdson≤5Ω)
Low Gate Charge(Typ: 9nC)
Low Reverse Transfer Capacitances(Typ: 6pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger.
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
2N65 TO-220C 2N65 Pb-free Tube 1000/box
F2N65 TO-220F F2N65 Pb-free Tube 1000/box
B2N65 TO-251 B2N65 Pb-free Tube 3000/box
D2N65 TO-252 D2N65 Pb-free Tape & Reel 2500/box
I2N65 TO-262 I2N65 Pb-free Tube 1000/box
E2N60 TO-263 E2N60 Pb-free Tape & Reel 800/box
 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier