Manufacturing Technology: | Discrete Device |
---|---|
Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
|
---|
Customization: |
---|
Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
---|
Payment Method: | |
---|---|
Initial Payment Full Payment |
Currency: | US$ |
---|
Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
---|
Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | |
Drian-to-Source Voltage | VDSS | -100 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current(continuous) | (Tc=25ºC) | -13 | ||
(Tc=100ºC) | -9 | A | ||
Drain Current(Pulsed) | IDM | -52 | A | |
Single Pulse Avalanche Energy | EAS | 88 | mJ | |
Total Dissipation | Ta=25ºC | Ptot | 2 | W |
TC=25ºC | Ptot | 63 | W | |
Junction Temperature | Tj | -55~175 | ºC | |
storage Temperature | Tstg | -55~175 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications
|
Inverter management system
|
Electric tools
|
Automotive electronics
|
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
18P10
|
To-220C |
18P10
|
Pb-free | PIPE | 1000/box |
18P10F | To-220F | 18P10F | Pb-free | Reel | 1000/box |
18P10E | To-263 | 18P10E | Pb-free | PIPE | 800/box |
18P10B | To-251B | 18P10B | Pb-free | PIPE | 3000/box |
18P10U | To-252B | 18P10D | Pb-free | Reel | 5000/box |
Suppliers with verified business licenses