13A 100V P-Channel Enhancement Mode Power Mosfet 18p10

Product Details
Customization: Available
Application: Power Switch Circuit
Batch Number: 2021
Still deciding? Get samples of US$ 0.15/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
  • 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
  • 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
  • 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
  • 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
  • 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
Find Similar Products

Basic Info.

Model NO.
18P10
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
18p10
Package
to-220c
Type
N-Type Semiconductor
Voltage
100V
Current
13A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

13A 100V P-Channel Enhancement Mode Power Mosfet 18p1013A 100V P-Channel Enhancement Mode Power Mosfet 18p1013A 100V P-Channel Enhancement Mode Power Mosfet 18p1013A 100V P-Channel Enhancement Mode Power Mosfet 18p10
PARAMETER SYMBOL VALUE UNIT
Drian-to-Source Voltage VDSS -100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) (Tc=25ºC) -13  
(Tc=100ºC) -9 A
Drain Current(Pulsed) IDM -52 A
Single Pulse Avalanche Energy EAS 88 mJ
Total Dissipation Ta=25ºC Ptot 2 W
TC=25ºC Ptot 63 W
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter management system
Electric tools
Automotive electronics
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
18P10
To-220C
18P10
Pb-free PIPE 1000/box
18P10F To-220F 18P10F Pb-free Reel 1000/box
18P10E To-263 18P10E Pb-free PIPE 800/box
18P10B To-251B 18P10B Pb-free PIPE 3000/box
18P10U To-252B 18P10D Pb-free Reel 5000/box
 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier