8A 700V N-Channel Enhancement Mode Power Mosfet Dhdsj8n70 to-252b

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DHDSJ8N70
• Package: to-252b
• Application: Power Switching,Inverter,Electric Tools
• Model: Dhdsj8n70
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 700V
• Current: 8A
• Transport Package: Tape, Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

Features

Fast switching

Low on resistance(Rdson≤0.6Ω)

Low gate charge(Typ: 16nC)

Low reverse transfer capacitances(Typ: 3.1pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Power factor correction(PFC).

Switched mode power supplies(SMPS).

Uninterruptible power supply(UPS).

AC to DC Converters

Telecom

 

PARAMETER			SYMBOL	RATING		UNIT
				DHSJ8N70/DHISJ8N70/DHESJ8N70/DHBSJ8N70/DHDSJ8N70	DHFSJ8N70
Drian-to-Source Voltage			VDSS	700		V
Gate-to-Source Voltage			VGSS	±20		V
Continuous Drain Current			ID TC=25ºC	8		A
			TC=100ºC	4.9		A
Pulsed Drain Current			IDM	24		A
Single Pulse Avalanche Energy			EAS	79		mJ
Power Dissipation		Ta=25ºC	Ptot	2	2	W
		TC=25ºC	Ptot	70	28	W
Isolation Voltage			VISO	/	2000	V
Junction Temperature Range			Tj	-55~150		ºC
Storage Temperature Range			Tstg	-55~150		ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHSJ8N70	TO-220C	DHSJ8N70	Pb-free	Tube	1000/box
DHFSJ8N70	TO-220F	DHFSJ8N70	Pb-free	Tube	1000/box
DHBSJ8N70	TO-251	DHBSJ8N70	Pb-free	Tube	3000/box
DHDSJ8N70	TO-252	DHDSJ8N70	Pb-free	Tape & Reel	2500/box
DHISJ8N70	TO-262	DHISJ8N70	Pb-free	Tube	1000/box
DHESJ8N70	TO-263	DHESJ8N70	Pb-free	Tape & Reel	800/box