Customization: | Available |
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Manufacturing Technology: | Discrete Device |
Type: | N-type Semiconductor |
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PARAMETER | SYMBOL | RATING | UNIT | ||
Collector-Emitter Voltage | VCES | 1200 | V | ||
Gate- Emitter Voltage | VGES | ±20 | V | ||
Collector Current | IC(T=25ºC) | 60 | A | ||
Collector Current | (Tc=100ºC) | 30 | A | ||
Pulsed Collector Current | ICM | 90 | A | ||
Diode Continuous Forward Current | IF @TC = 100 °C | 30 | A | ||
Diode Maximum Forward Current | IFM | 90 | A | ||
Total Dissipation | TC=25ºC | PD | 227 | W | |
TC=100ºC | PD | 91 | W | ||
Junction Temperature | Tj | 150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
FS Trench Technology, Positive temperature coefficient |
Low saturation voltage: VCE(sat), typ = 2.2V @ IC =30A and VGE=15V |
Mainly used in inverter welding machine, suitable for working frequency < 30kHz. |
Applications |
Inverter welding machine |
General frequency converter |
UPS |
Motor control |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
G30N120D | TO-247 | G30N120D | Pb-free | Tube | 300/box |