Customization: | Available |
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Application: | Power Switching Circuit |
Batch Number: | 2022 |
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PARAMETER | SYMBOL | VALUE | UNIT | ||
20N65D | |||||
Maximum Drian-Source DC Voltage | VDS | 650 | V | ||
Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 20 | A | ||
(T=100ºC) | 12.5 | A | |||
Drain Current(Pulsed) | IDM | 80 | A | ||
Single Pulse Avalanche Energy | EAS | 1500 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 2.08 | W | |
TC=25ºC | Ptot | 260 | W | ||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
ESD improved capability |
Low on resistance(Rdson≤0.50Ω) |
Low gate charge(Typ: 58nC) |
Low reverse transfer capacitances(Typ: 20pF) |
100% single pulse avalanche energy test |
100% ΔVDS Test |
Applications |
Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency. |
Power switch circuit of electron ballast and adaptor. |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
20N65D | TO-3P | 20N65D | Pb-free | Tube | 300/box |