20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 20N65D
• Package: to-3p
• Application: Power Switching Circuit
• Model: 20n65D
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 650V
• Current: 20A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			20N65D
Maximum Drian-Source DC Voltage		VDS	650		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	20		A
		(T=100ºC)	12.5		A
Drain Current(Pulsed)		IDM	80		A
Single Pulse Avalanche Energy		EAS	1500		mJ
Total Dissipation	Ta=25ºC	Ptot	2.08		W
	TC=25ºC	Ptot	260		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low on resistance(Rdson≤0.50Ω)

Low gate charge(Typ: 58nC)

Low reverse transfer capacitances(Typ: 20pF)

100% single pulse avalanche energy test

100% ΔV_DS Test

Applications

Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
20N65D	TO-3P	20N65D	Pb-free	Tube	300/box