1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L
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Product Details
| Customization: | Available |
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| Application: | Diode, Switching Mode Power Supplies |
| Batch Number: | 2023 |
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Year of Establishment
2004-12-07
Number of Employees
234
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Basic Info.
- Model NO.
- DCCT20D120G4
- Manufacturing Technology
- Discrete Device
- Material
- Silicon
- Model
- Dcct20d120g4
- Package
- to-247-2L
- Type
- N-Type Semiconductor
- Voltage
- 1200V
- Current
- 20A
- Brand
- Wxdh
- Transport Package
- Reel
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541100000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Product Description
20A 1200V SiC Schottky Barrier Diode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.
| Features |
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high voltage
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| Zero Reverse Recovery Current |
| Zero Forward Recovery Voltage |
| Positive Temperature Coefficient on VF |
| 175ºC Operating Junction Temperature |
| Applications |
| Switching Mode Power Supplies |
| Power Factor Correction |
| Motor drive, PV inverter, wind power station |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Peak Repetitive Reverse Voltage | VRRM | 1200 | V | ||
| Working Peak Reverse Voltage | VRWM | 1200 | V | ||
| DC Blocking Voltage | VR | 1200 | V | ||
| Average Rectified Forward Current |
(Tc≤150ºC)
|
IF(AV) | 20 | A | |
| Repetitive Peak Forward Surge Current (t=8.3ms) | IFSM | 180 | A | ||
| Power dissipation | Ptot | 250 | W | ||
| Operating Junction Temperature Range | Tj | -55~175 | ºC | ||
| Storage Temperature Range | Tstg | -55~175 | ºC | ||
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Soldering Temperature
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Tsold
|
260
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ºC
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| Product Specifications and Packaging Models | ||
| Product Model | Package Type | Mark Name |
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DCCT20D120G4
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TO-247-2L
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DCCT20D120G4
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