0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b

Product Details
Customization: Available
Application: Power Switching Circuit
Batch Number: 2021
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Number of Employees
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Year of Establishment
2004-12-07
  • 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
  • 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
  • 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
  • 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
  • 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
  • 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
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Basic Info.

Model NO.
B1N60
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
B1n60
Package
to-251b
Type
N-Type Semiconductor
Voltage
600V
Current
0.8A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
 
PARAMETER SYMBOL VALUE UNIT
1N60/I1N60/E1N60/B1N60/D1N60 F1N60  
Drian-Source Voltage VDS 600 V
Gate-Drain Voltage VGS ±30 V
Drain Current(continuous) ID(T=25ºC) 0.8 A
(T=100ºC) 0.6 A
Drain Current(Pulsed) IDM 3.2 A
Single Pulse Avalanche Energy EAS 20 mJ
Peak Diode Recovery dv/dt dv/dt 5 V/ns
Total Dissipation Ta=25ºC Ptot 2 2 W
TC=25ºC Ptot 25 12 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Fast Switching
Low ON Resistance(Rdson≤15Ω)
Low Gate Charge(Typ: 4nC)
Low Reverse Transfer Capacitances(Typ: 2.6pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger.
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
1N60 TO-220C 1N60 Pb-free Tube 1000/box
F1N60 TO-220F F1N60 Pb-free Tube 1000/box
B1N60 TO-251B B1N60 Pb-free Tube 3000/box
D1N60 TO-252B D1N60 Pb-free Tape & Reel 2500/box
I1N60 TO-262 I1N60 Pb-free Tube 1000/box
E1N60 TO-263 E1N60 Pb-free Tape & Reel 800/box
 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b

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