20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L

Product Details
Customization: Available
Application: Aircondition, Weldin, UPS
Batch Number: 2022
Still deciding? Get samples of US$ 0.15/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
  • 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
  • 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
  • 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
  • 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
  • 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
Find Similar Products

Basic Info.

Model NO.
DGE20F65M2
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Dge20f65m2
Package
to-263-3L
Type
N-Type Semiconductor
Voltage
650V
Current
20A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 25.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 650 V
Gate- Emitter Voltage VGES ±30 V
Collector Current IC(T=25ºC) 40 A
Collector Current  (Tc=100ºC) 20 A
Pulsed Collector Current ICM 60 A
Diode Continuous Forward Current I@TC = 100 °C 20 A
Diode Maximum Forward Current IFM 60 A
Total Dissipation TC=25ºC PD 166 W
Junction Temperature Tj -45~175 ºC
storage Temperature Tstg -45~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =20A and TC = 25°C
Applications
Welding
Three-level Inverter
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DGE20F65M2 TO-263-3L DGE20F65M2 Pb-free Tube 4000/box
 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier