Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Package: to-3pn
• Application: Aircondition, Weldin, UPS
• Model: G40t60d
• Model NO.: G40T60D
• Batch Number: 2021
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000

Product Description

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	600		V
Gate- Emitter Voltage		VGES	±20		V
Collector Current		IC(T=25ºC)	80		A
Collector Current		(Tc=100ºC)	40		A
Pulsed Collector Current		ICM	120		A
Diode Continuous Forward Current		IF @TC = 100 °C	20		A
Diode Maximum Forward Current		IFM	100		A
Total Dissipation	TC=25ºC	PD	280		W
	TC=100ºC	PD	110		W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 1.8V
@ I_C =40A and V_GE=25V

Applications

welding

Aircondition

UPS

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G40T60D	TO-3PN	G40T60D	Pb-free	Tube	300/box