Customization: | Available |
---|---|
Manufacturing Technology: | Discrete Device |
Type: | N-type Semiconductor |
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Features |
Low power loss, |
high efficiency Low forward voltage, |
high current capability High surge capacity |
Super fast recovery times |
high voltage |
Applications |
Switching Power Supply |
Power Switching Circuits |
Inverter power supply |
PARAMETER | SYMBOL | VALUE | UNIT | ||
Peak Repetitive Reverse Voltage | VRRM | 200 | V | ||
Working Peak Reverse Voltage | VRWM | 200 | V | ||
DC Blocking Voltage | VR | 200 | V | ||
Average Rectified Forward Current (single) | IF(AV) | 15 | A | ||
Average Rectified Forward Current (double) | IF(AV) | 30 | A | ||
Repetitive Peak Surge Current | IFRM | 20 | A | ||
Nonrepetitive Peak Surge Current | t=8.3ms | IFSM | 180 | A | |
Avalanche Energy(single) | L=1mH | EAS | 50 | mJ | |
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MUR3020CT | TO-220 | MUR3020CT | Pb-free | Tube | 1000/box |
MUR3020DCT | TO-3PN | MUR3020DCT | Pb-free | Tube | 300/box |
MUR3020BCT | TO-247 | MUR3020BCT | Pb-free | Tube | 300/box |