| Manufacturing Technology: | Discrete Device |
|---|---|
| Material: | Silicon |
| Type: | N-type Semiconductor |
| Package: | to-3pn |
| Application: | Switching Power Supply |
| Model: | Mur2060CT |
| Customization: |
|---|
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| Features |
| Low power loss, |
| high efficiency Low forward voltage, |
| high current capability High surge capacity |
| Super fast recovery times |
| high voltage |
| Applications |
| Switching Power Supply |
| Power Switching Circuits |
| Inverter power supply |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Peak Repetitive Reverse Voltage | VRRM | 200 | V | ||
| Working Peak Reverse Voltage | VRWM | 200 | V | ||
| DC Blocking Voltage | VR | 200 | V | ||
| Average Rectified Forward Current (single) | IF(AV) | 15 | A | ||
| Average Rectified Forward Current (double) | IF(AV) | 30 | A | ||
| Repetitive Peak Surge Current | IFRM | 20 | A | ||
| Nonrepetitive Peak Surge Current | t=8.3ms | IFSM | 180 | A | |
| Avalanche Energy(single) | L=1mH | EAS | 50 | mJ | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| MUR3020CT | TO-220 | MUR3020CT | Pb-free | Tube | 1000/box |
| MUR3020DCT | TO-3PN | MUR3020DCT | Pb-free | Tube | 300/box |
| MUR3020BCT | TO-247 | MUR3020BCT | Pb-free | Tube | 300/box |
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