200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DSN108N20N
• Package: to-3pn
• Application: Power Switch Circuit
• Model: Dsn108n20n
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 200V
• Current: 110A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE	UNIT
Drian-to-Source Voltage		VDSS	200	V
Gate-to-Source Voltage		VGSS	±20	V
Drain Current(continuous)		(Tc=25ºC)	110	A
		(Tc=100ºC)	78	A
Drain Current(Pulsed)		IDM	440	A
Single Pulse Avalanche Energy		EAS	1190	mJ
Total Dissipation	Ta=25ºC	Ptot	2.3	W
	TC=25ºC	Ptot	333	W
Junction Temperature		Tj	-55~175	ºC
storage Temperature		Tstg	-55~175	ºC

 

Features

Low on resistance

Low reverse transfer capacitances

100% single pulse avalanche energy test

100% ΔVDS test

Pb-Free plating / Halogen-Free / RoHS compliant

Applications

Power switching applications

DC-DC converters

Full bridge control

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DSN108N20N	To-3PN	DSN108N20N	Pb-free	PIPE	2000/box