200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn

Product Details
Customization: Available
Application: Power Switch Circuit
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
  • 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
  • 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
  • 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
  • 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
  • 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
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Basic Info.

Model NO.
DSN108N20N
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
Dsn108n20n
Package
to-3pn
Type
N-Type Semiconductor
Voltage
200V
Current
110A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
PARAMETER SYMBOL VALUE UNIT
Drian-to-Source Voltage VDSS 200 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) (Tc=25ºC) 110 A
(Tc=100ºC) 78 A
Drain Current(Pulsed) IDM 440 A
Single Pulse Avalanche Energy EAS 1190 mJ
Total Dissipation Ta=25ºC Ptot 2.3 W
TC=25ºC Ptot 333 W
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Features
Low on resistance
Low reverse transfer capacitances
100% single pulse avalanche energy test
100% ΔVDS test
Pb-Free plating / Halogen-Free / RoHS compliant
Applications
Power switching applications
DC-DC converters
Full bridge control
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DSN108N20N
To-3PN
DSN108N20N
Pb-free PIPE 2000/box
 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn

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