


75A 1700V 6 in one-package
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
| Features |
FS Trench Technology, Positive temperature
coefficient |
Low saturation voltage: VCE(sat), typ = 2.25V
@ IC =75A and Tj = 25°C |
| Extremely enhanced avalanche capability |
| Applications |
| Welding |
| UPS |
| Three-leve Inverter |
| AC to DC Converters |
| AC and DC servo drive amplifier |
| Type |
VCE |
IC |
VCEsat,Tj=25ºC |
Tjop |
Package |
| DGC75C170M2T |
1700V |
75A (Tj=100ºC) |
2.25V (Typ) |
175ºC |
Econopack2 |
Electrical Characteristics
5.1 Absolute Maximum Ratings (IGBT-inverter/IGBT-brake) (Tc=25ºC,unless otherwise specified)
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| |
|
|
| Collector-to-Emitter Voltage |
VCE |
1700 |
V |
| Gate-to-Emitter Voltage |
VGE |
±20 |
V |
| DC Collector current |
Ic Tj=25ºC |
150 |
A |
| Tj=100ºC |
75 |
A |
| Pulsed Collector Current #1 |
ICM |
300 |
A |
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| |
|
|
| Peak Repetitive Reverse Voltage |
VRRM |
1700 |
V |
| DC Blocking Voltage |
VR |
1700 |
V |
| Average Rectified Forward Current |
IF(AV) |
75 |
A |
| Repetitive Peak Surge Current |
IFRM |
150 |
A |
| Nonrepetitive Peak Surge Current(single) /tp=1.0ms |
IFSM |
300 |
A |
5.3 IGBT Module
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| |
|
|
| Junction Temperature Range |
Tjmax |
-45~175 |
ºC |
| Operating Junction Temperature |
Tjop |
-45~150 |
ºC |
| Storage Temperature Range |
Tstg |
-45~150 |
ºC |
| Isolation Voltage RMS,f=50Hz,t=1min |
VISO |
4000 |
A |