Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | |
DHS037N10F | ||||
Drian-to-Source Voltage | VDSS | 100 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current(continuous) | ID(T=25ºC) | 130 | A | |
(T=100ºC) | 110 | A | ||
Drain Current(Pulsed) | IDM | 520 | A | |
Single Pulse Avalanche Energy | EAS | 380 | mJ | |
Total Dissipation | Ta=25ºC | Ptot | 2 | W |
TC=25ºC | Ptot | 35 | W | |
Junction Temperature | Tj | -55~175 | ºC | |
storage Temperature | Tstg | -55~175 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
High avalanche current
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100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Synchronous rectification in SMPS |
Hard switching and high speed circuit |
Electric tools |
UPS |
Motor control |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHS037N10F | TO-220F | DHS037N10F | Pb-free | Tube | 1000/box |
Suppliers with verified business licenses