Customization: | Available |
---|---|
Manufacturing Technology: | Discrete Device |
Type: | N-type Semiconductor |
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PARAMETER | SYMBOL | VALUE | UNIT | |
Peak Repetitive Reverse Voltage | VRRM | 600 | V | |
Working Peak Reverse Voltage | VRWM | 600 | V | |
DC Blocking Voltage | VR | 600 | V | |
Average Rectified Forward Current(single) | Tc=135ºC | IF(AV) | 30 | A |
Average Rectified Forward Current(double) | Tc=135ºC | 60 | A | |
Repetitive Peak Surge Current(single) | IFRM | 45 | A | |
Nonrepetitive Peak Surge Current(single) | t=8.3ms | IFSM | 300 | A |
Avalanche Energy(single) | L=1mH | EAS | 30 | mJ |
Operating Junction Temperature Range | Tj | -55~150 | ºC | |
Storage Temperature Range | Tstg | -55~150 | ºC |
Features |
Low power loss |
high efficiency Low forward voltage |
high current capability High surge capacity |
Super fast recovery times |
high voltage |
Applications |
Switching Power Supply |
Power Switching Circuits |
General Purpose |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MUR6060NCT | TO-3PN | MUR6060NCT | Pb-free | Tube | 300/box |
MUR6060DCT | TO-3P | MUR6060DCT | Pb-free | Tube | 300/box |
MUR6060BCT | TO-247 | MUR6060BCT | Pb-free | Tube | 300/box |