600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: B2N60
• Package: to-251b
• Application: Power Switching Circuit
• Model: B2n60
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 600V
• Current: 2A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			2N60/I2N60/E2N60/B2N60/D2N60	F2N60
Drian-Source Voltage		VDS	600		V
Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	2		A
		(T=100ºC)	1.26		A
Drain Current(Pulsed)		IDM	8		A
Single Pulse Avalanche Energy		EAS	64		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	35	20	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance(Rdson≤4.5Ω)

Low Gate Charge(Typ: 8nC)

Low Reverse Transfer Capacitances(Typ: 3.8pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
2N60	TO-220C	2N60	Pb-free	Tube	1000/box
F2N60	TO-220F	F2N60	Pb-free	Tube	1000/box
B2N60	TO-251	B2N60	Pb-free	Tube	3000/box
D2N60	TO-252	D2N60	Pb-free	Tape & Reel	2500/box
I2N60	TO-262	I2N60	Pb-free	Tube	1000/box
E2N60	TO-263	E2N60	Pb-free	Tape & Reel	800/box