Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off

Product Details
Customization: Available
Voltage: 650V
Currency: 60A
Still deciding? Get samples of US$ 0/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
  • Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
  • Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
  • Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
  • Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
  • Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
Find Similar Products

Basic Info.

Model NO.
G60N65D
Manufacturing Technology
Discrete Device
Type
N-type Semiconductor
Material
Silicon
Package
to-3pn
Application
Inverter Welding Machine, UPS
Model
G60n65D
Batch Number
2021
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%offInsulated Gate Bipolar Transistor IGBT G60n65D to-247 **%offInsulated Gate Bipolar Transistor IGBT G60n65D to-247 **%offInsulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 600 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 120 A
Collector Current  (Tc=100ºC) 60 A
Pulsed Collector Current ICM 180 A
Diode Continuous Forward Current I@TC = 100 °C 30 A
Diode Maximum Forward Current IFM 100 A
Total Dissipation TC=25ºC PD 300 W
TC=100ºC PD 120 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.2V
@ IC =60A and VGE=15V
Mainly used in inverter welding machine, suitable for working frequency < 60kHz.
Applications
Inverter welding machine
Solar inverter
UPS
Medium and high switching frequency inverter
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G60T65D TO-3PN G60T65D Pb-free Tube 300/box
 Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier