Insulated Gate Bipolar Transistor IGBT G15n120d to-247

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: G15N120D
• Package: to-247
• Application: Inverter Welding Machine, UPS
• Model: G15n120d
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 1200V
• Currency: 15A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	1200		V
Gate- Emitter Voltage		VGES	±20		V
Collector Current		IC(T=25ºC)	30		A
Collector Current		(Tc=100ºC)	15		A
Pulsed Collector Current		ICM	45		A
Diode Continuous Forward Current		IF @TC = 100 °C	15		A
Diode Maximum Forward Current		IFM	45		A
Total Dissipation	TC=25ºC	PD	160		W
	TC=100ºC	PD	65		W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 2.0V
@ I_C =15A and V_GE=15V

Integrated FRD

Applications

Electromagnetic heating (IH) equipment such as induction cooker.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G15N120D	TO-247	G15N120D	Pb-free	Tube	300/box