• 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
  • 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
  • 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
  • 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
  • 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
  • 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus

160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus

Application: Welding, UPS
Batch Number: 2023
Manufacturing Technology: Discrete Device
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
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160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus pictures & photos
160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
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Basic Info.

Model NO.
DGCP160H65L2
Material
Silicon
Model
Dgcp160h65L2
Package
to-247
Type
N-Type Semiconductor
Voltage
650V
Current
160A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 650 V
Gate- Emitter Voltage VGES ±30 V
Collector Current IC(T=25ºC) 240 A
Collector Current  (Tc=100ºC) 160 A
Pulsed Collector Current ICM 480 A
Diode Continuous Forward Current I@TC = 100 °C 80 A
Total Dissipation TC=25ºC
Ptot
882 W
TC=100ºC
Ptot
441 W
Junction Temperature Tj -45~175 ºC
storage Temperature Tstg -45~150 ºC
 
Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =30A and Tj = 25°C
Low switching losses due to the combination of FS
technology and SiC technology
Extremely enhanced avalanche capability
Applications
Welding
Three-level inverter
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DGCP160H65L2
TO-247
DGCP160H65L2
Pb-free PIPE 1000/box
 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus

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From payment to delivery, we protect your trading.
160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus pictures & photos
160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07