100V 50A N-Mosfet Dsb190n10L3

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DSB190N10L3
• Package: to-251
• Application: Switching Mode Power Supplies
• Model: Dsb190n10L3
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 100V
• Current: 50A
• Transport Package: Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 8A 650V SIC SchottkyBarrierDiode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.

 

Features

Low on resistance

Low reverse transfer capacitances

100% single pulse avalanche energy test

100% ΔVDS test Ciss@

Pb-Free plating / Halogen-Free / RoHS compliant

Applications

Motor Control and Drive

Charge/Discharge for Battery Management System

Synchronous Rectifier for SMPS

 Marking &packing information

Part #	Package	Marking	Tube/Reel	Qty(pcs)
DSD190N10L3	TO-252	DSD190N10L3	Reel	2500/box
DSB190N10L3	TO-251	DSB190N10L3	Tube	3000/box

 

PARAMETER			SYMBOL	VALUE	UNIT
Drain-source voltage			VDS	100	V
Gate-Source voltage			VGS	±20	V
Continuous drain current		TC = 25°C	ID	50	A
		TC = 100°C		35	A
Pulsed drain current (TC = 25°C, tp limited by Tjmax)			ID pulse	200	A
Avalanche energy, single pulse (L=0.5mH, Rg=25)			EAS	90	MJ
Power dissipation (TC = 25°C)			Ptot	68	W
Operating junction and storage temperature			Tj , T stg	-55~175	ºC