100V 50A N-Mosfet Dsb190n10L3

Product Details
Customization: Available
Application: Switching Mode Power Supplies
Batch Number: 2023
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Number of Employees
234
Year of Establishment
2004-12-07
  • 100V 50A N-Mosfet Dsb190n10L3
  • 100V 50A N-Mosfet Dsb190n10L3
  • 100V 50A N-Mosfet Dsb190n10L3
  • 100V 50A N-Mosfet Dsb190n10L3
  • 100V 50A N-Mosfet Dsb190n10L3
  • 100V 50A N-Mosfet Dsb190n10L3
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Basic Info.

Model NO.
DSB190N10L3
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Dsb190n10L3
Package
to-251
Type
N-Type Semiconductor
Voltage
100V
Current
50A
Brand
Wxdh
Transport Package
Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

100V 50A N-Mosfet Dsb190n10L3100V 50A N-Mosfet Dsb190n10L3100V 50A N-Mosfet Dsb190n10L3100V 50A N-Mosfet Dsb190n10L3
 8A 650V SIC SchottkyBarrierDiode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.

 
Features
Low on resistance
Low reverse transfer capacitances
100% single pulse avalanche energy test
100% ΔVDS test Ciss@
Pb-Free plating / Halogen-Free / RoHS compliant
Applications
Motor Control and Drive
Charge/Discharge for Battery Management System
Synchronous Rectifier for SMPS

 Marking &packing information
Part #
Package
Marking
Tube/Reel
Qty(pcs)
DSD190N10L3
TO-252
DSD190N10L3
Reel
2500/box
DSB190N10L3
TO-251
DSB190N10L3
Tube
3000/box
 
PARAMETER SYMBOL VALUE UNIT
 
Drain-source voltage
VDS
100 V
Gate-Source voltage
VGS
±20
V
Continuous drain current
TC = 25°C
I
50 A
TC = 100°C
35 A
Pulsed drain current (TC = 25°C, tp limited by Tjmax)
ID pulse
200 A
Avalanche energy, single pulse (L=0.5mH, Rg=25)
EAS
90 MJ
Power dissipation (TC = 25°C)
Ptot
68 W
Operating junction and storage temperature
Tj , T stg
-55~175 ºC
 
 100V 50A N-Mosfet Dsb190n10L3

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