40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7

Product Details
Customization: Available
Application: Solar Inverters
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
  • 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
  • 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
  • 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
  • 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
  • 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
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Basic Info.

Model NO.
Dcev075m120g2c
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dcev075m120g2c
Package
to-263-7
Type
N-Type Semiconductor
Voltage
1200V
Current
40A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-740A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-740A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-740A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
40A 1200V N-channel SiC Power MOSFET
 
Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required.
40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
 
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current
VGS=20V,TC=25ºC
41 A
VGS=20V,TC=100ºC
28 A
Pulsed Drain Current ID(PULSE) 80 A
Power Dissipation Tj=175ºC PD 208 W
TC=25ºC PD W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol
Typ
Unitº
Thermal Resistance,Junction to Case-sink RthJC
0.72
ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCEV075M120G2C
TO-263-7
DCEV075M120G2C
Pb-free Tube 800/box
 40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7

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