1200V 60A N-Channel Sic Power Mosfet Dhc1m040120W to-247

• Manufacturing Technology: Discrete Device
• Material: Sic
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DHC1M040120W
• Package: to-247
• Application: Power Supplies
• Model: Dhc1m040120W
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 1200V
• Current: 60A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

60A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 

Features

Higher System Efficiency

Reduced Cooling Requirements

Increased Power Density

Increased System Switching Frequency

Applications

Power Supplies

High Voltage DC/DC Converters

Motor Drives

Switch Mode Power Supplies

Pulsed Power applications

 

PARAMETER			SYMBOL	VALUE		UNIT
Drian-to-Source Voltage			VDSS	1200		V
Gate-to-Source Voltage max			VGSS	-10/+25		V
Gate-to-Source Voltage max			VGSS	-5/+20		V
Continuous Drain Current			ID TC=25ºC	60		A
			TC=100ºC	40		A
Pulsed Drain Current			IDM	160		A
Power Dissipation		Tj=150ºC	Ptot	330		W
		TC=25ºC	Ptot			W
Junction Temperature Range			Tj	-55~150		ºC
Storage Temperature Range			Tstg	-55~150		ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHC1M040120W	TO-247	DHC1M040120W	Pb-free	Tube	300/box