650 V 8A Sic Schottky Barrier Diode SDS065j008s3

Product Details
Customization: Available
Application: Diode, Switching Mode Power Supplies
Batch Number: 2023
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Number of Employees
234
Year of Establishment
2004-12-07
  • 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
  • 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
  • 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
  • 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
  • 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
  • 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
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Basic Info.

Model NO.
SDS065J008S3
Manufacturing Technology
Discrete Device
Material
Silicon
Model
SDS065j008s3
Package
to-Dfn8*8-4L
Type
N-Type Semiconductor
Voltage
650V
Current
8A
Brand
Wxdh
Transport Package
Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

650 V 8A Sic Schottky Barrier Diode SDS065j008s3650 V 8A Sic Schottky Barrier Diode SDS065j008s3650 V 8A Sic Schottky Barrier Diode SDS065j008s3650 V 8A Sic Schottky Barrier Diode SDS065j008s3
 8A 650V SIC SchottkyBarrierDiode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.

 
Features
Low power loss
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
175ºC Operating Junction Temperature
Applications
Switching Mode Power Supplies
Power Factor Correction
Motor drive, PV inverter, wind power station
 
PARAMETER SYMBOL VALUE UNIT
 
Peak Repetitive Reverse Voltage VRRM 650 V
Working Peak Reverse Voltage VRWM 650 V
DC Blocking Voltage VR 650 V
Average Rectified Forward Current TO-220(Tc=25ºC)
 
IF(AV) 29 A
TO-220(Tc=150ºC) 14 A
TO-220F(Tc=130ºC) 8 A
Repetitive Peak Forward Surge Current (t=10ms)t IFRM 39 A
Nonrepetitive Peak Surge Current  t=10ms IFSM 65 A
Power dissipation Ptot 125 W
Operating Junction Temperature Range Tj -55~175 ºC
Storage Temperature Range Tstg -55~175 ºC
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name
SDS065J0083 DFN 8*-4L SDS065J0083
 650 V 8A Sic Schottky Barrier Diode SDS065j008s3

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