Insulated Gate Bipolar Transistor IGBT G30n60d to-247

Product Details
Customization: Available
Application: Inverter Welding Machine, UPS
Batch Number: 2022
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Number of Employees
234
Year of Establishment
2004-12-07
  • Insulated Gate Bipolar Transistor IGBT G30n60d to-247
  • Insulated Gate Bipolar Transistor IGBT G30n60d to-247
  • Insulated Gate Bipolar Transistor IGBT G30n60d to-247
  • Insulated Gate Bipolar Transistor IGBT G30n60d to-247
  • Insulated Gate Bipolar Transistor IGBT G30n60d to-247
  • Insulated Gate Bipolar Transistor IGBT G30n60d to-247
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Basic Info.

Model NO.
G30N60D
Manufacturing Technology
Discrete Device
Material
Silicon
Model
G30n60d
Package
to-247
Type
N-Type Semiconductor
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

Insulated Gate Bipolar Transistor IGBT G30n60d to-247Insulated Gate Bipolar Transistor IGBT G30n60d to-247Insulated Gate Bipolar Transistor IGBT G30n60d to-247Insulated Gate Bipolar Transistor IGBT G30n60d to-247
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 600 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 60 A
Collector Current  (Tc=100ºC) 30 A
Pulsed Collector Current ICM 90 A
Diode Continuous Forward Current I@TC = 100 °C 20 A
Diode Maximum Forward Current IFM 100 A
Total Dissipation TC=25ºC PD 250 W
TC=100ºC PD 100 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V
@ IC =30A and VGE=15V
Mainly used in inverter welding machine, suitable for working frequency < 50kHz.
Applications
Inverter welding machine
Solar inverter
UPS
Medium and high switching frequency converter
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G30N60D TO-247 G30N60D Pb-free Tube 300/box
 Insulated Gate Bipolar Transistor IGBT G30n60d to-247

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