Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
|
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Parameter
|
SYMBOL | VALUE | UNIT | |
Drian-to-Source Voltage
|
BVDSS | 100 | V | |
Gate-to-Source Voltage
|
VGSS
|
±20 | V | |
Continuous Drain Current |
ID(TC=25ºC)
|
180 | A | |
ID(TC=100ºC) | 115 | A | ||
Pulsed Drain Current (1)
|
IDM | 720 | V | |
Single Pulse Avalanche Energy (4)
|
EAS | 1720 | mJ | |
Power Dissipation
|
Ptot(
Ta=25ºC)
|
2 | W | |
Ptot(
Tc=25ºC)
|
152 | W | ||
Junctio
n Temperature Range
|
Tj |
-55~150
|
ºC
|
|
Storage Temperature Range
|
Tstg
|
-55~150
|
ºC
|
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications
|
Power management for inverter systems
|
Battery management
|
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHS025N10U
|
TOLL |
DHS025N10U
|
Pb-free | Tube | 1800/box |
Suppliers with verified business licenses